Title :
Selective area bandgap control during MBE growth of InGaAs/InAlAs QWs for optoelectronic device applications
Author :
Gupta, V.K. ; Williams, R.L. ; Wasilewski, Z.R. ; Dion, M. ; Aers, G.C. ; Norman, C.E.
Author_Institution :
Dept. of Phys., Imperial Coll. of Sci., Technol. & Med., London, UK
Abstract :
Semiconductor lasers emitting at 1.3 /spl mu/m and 1.55 /spl mu/m wavelengths are of particular interest because of their application in optical fibre communication systems. In this work, we investigate for the first time the process of indium migration during the growth of InGaAs-InAlAs single quantum wells grown by MBE on patterned InP substrates for the fabrication of long wavelength integrated optoelectronic devices.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; laser transitions; molecular beam epitaxial growth; optical fibre communication; optical transmitters; quantum well lasers; semiconductor growth; 1.3 mum; 1.55 mum; InGaAs-InAlAs; InGaAs-InAlAs single quantum wells; InGaAs/InAlAs QWs; MBE growth; indium migration; long wavelength integrated optoelectronic devices; optical fibre communication systems; optoelectronic device applications; patterned InP substrates; selective area bandgap control; semiconductor lasers; Communication system control; Fiber lasers; Indium compounds; Indium gallium arsenide; Indium phosphide; Optical fiber communication; Photonic band gap; Quantum well lasers; Semiconductor lasers; Substrates;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1996. LEOS 96., IEEE
Conference_Location :
Boston, MA, USA
Print_ISBN :
0-7803-3160-5
DOI :
10.1109/LEOS.1996.571583
