1.14 /spl mu/m strained-layer InGaAs-GaAs-InGaP SQW lasers on ternary In/sub 0.03/Ga/sub 0.97/As substrates by metalorganic chemical vapor deposition

Author

Jones, A.M. ; Kluender, J.F. ; Roh, S.D. ; Moore, A.H. ; Bonner, W.A. ; Coleman, J.J.

Author_Institution

Mater. Res. Lab., Illinois Univ., Urbana, IL, USA

Volume

2

fYear

1996

fDate

18-21 Nov. 1996

Firstpage

128

Abstract

In this talk, we present the design and device results of strained-layer InGaAs-GaAs-InGaP separate confinement heterostructure lasers emitting at 1.14 /spl mu/m fabricated on a ternary In/sub 0.03/Ga/sub 0.97/As substrate. The InGaAs substrate used for the devices in this talk was measured by FTIR spectroscopy to have an indium molar percent of 3.03%.

Keywords

III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; infrared spectra; laser transitions; optical testing; quantum well lasers; semiconductor device testing; semiconductor growth; vapour phase epitaxial growth; 1.14 mum; FTIR spectroscopy; In/sub 0.03/Ga/sub 0.97/As; InGaAs substrate; InGaAs-GaAs-InGaP; InGaAs-GaAs-InGaP separate confinement heterostructure lasers; indium molar percent; metalorganic chemical vapor deposition; strained-layer; strained-layer InGaAs-GaAs-InGaP SQW lasers; ternary In/sub 0.03/Ga/sub 0.97/As substrate; ternary In/sub 0.03/Ga/sub 0.97/As substrates; Chemical lasers; Gallium arsenide; Indium gallium arsenide; Photonic crystals; Quantum well lasers; Testing; Threshold current;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society Annual Meeting, 1996. LEOS 96., IEEE

Conference_Location

Boston, MA, USA

Print_ISBN

0-7803-3160-5

Type

conf

DOI

10.1109/LEOS.1996.571584

Filename

571584