Title :
InGaAs GRINSCH-SQW lasers with novel carbon delta doped contact layer
Author :
Yuan, Shu ; Li, Gang ; Tan, H.H. ; Jagadish, C. ; Karouta, F.
Author_Institution :
Dept. of Electron. Mater. Eng., Australian Nat. Univ., Canberra, ACT, Australia
Abstract :
In conclusion, we have demonstrated the use of novel carbon delta doped layers in the contact layer of InGaAs SQW GRINSCH lasers and compared with lasers consisting of Zn bulk doped contact layers. These carbon delta doped contact layer lasers are of interest for post growth tuning of the laser wavelength by quantum well intermixing without additional complications of dopant diffusion during subsequent processing.
Keywords :
III-V semiconductors; carbon; diffusion; gallium arsenide; gradient index optics; indium compounds; quantum well lasers; semiconductor doping; C; InGaAs; InGaAs GRINSCH-SQW lasers; Zn bulk doped contact layers; carbon delta doped contact layer; dopant diffusion; laser wavelength tuning; post growth tuning; quantum well intermixing; subsequent processing; Carbon dioxide; Doping; Gallium arsenide; Indium gallium arsenide; Laser theory; Laser tuning; Power engineering and energy; Quantum well lasers; Waveguide lasers; Zinc;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1996. LEOS 96., IEEE
Conference_Location :
Boston, MA, USA
Print_ISBN :
0-7803-3160-5
DOI :
10.1109/LEOS.1996.571586
