Title :
High brightness curved-facet laser diodes operating at 980 nm
Author :
Braddell, Jules ; O´Brien, P. ; McInerney, J.
Author_Institution :
Nat. Microelectron. Res. Centre, Cork, Ireland
Abstract :
Using a novel MOVPE fabrication technique and a weakly guiding waveguide structure high brightness InGaAs-GaAs-AlGaAs laser diodes with a narrow beam waist were produced. These devices were pulse tested and gave a peak output power of 0.58 Watts at 3 Amps with a beam waist of only 11 /spl mu/m.
Keywords :
indium compounds; 0.58 W; 11 mum; 3 A; 980 nm; InGaAs-GaAs-AlGaAs; MOVPE fabrication technique; beam waist; high brightness InGaAs-GaAs-AlGaAs laser diodes; high brightness curved-facet laser diodes; narrow beam waist; peak output power; pulse tested; weakly guiding waveguide structure; Artificial intelligence; Brightness; Diode lasers; Etching; Optical pumping; Optical resonators; Power generation; Power measurement; Testing; Threshold current;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1996. LEOS 96., IEEE
Conference_Location :
Boston, MA, USA
Print_ISBN :
0-7803-3160-5
DOI :
10.1109/LEOS.1996.571591
