• DocumentCode
    2545924
  • Title

    Advances in high efficiency CuInSe2 solar cells prepared by the selenization technique

  • Author

    Basol, Bulent M. ; Kapur, Vijay K. ; Halani, Arvind

  • Author_Institution
    International Solar Electric Technology, Inglewood, CA, USA
  • fYear
    1991
  • fDate
    7-11 Oct 1991
  • Firstpage
    893
  • Abstract
    Recent results are reported for 1 cm2 cells with active area efficiencies of 12.4%. The optoelectronic properties of window layers are expected to affect the cell parameters, especially the J sc and series resistance values of ZnO/CdS/CuInSe2 structures. It is demonstrated that in addition to these more conventional effects, the deposition technique used for the CdS film growth also influences the quality of the CdS/CuInSe2 junction which is represented by the diode factor value
  • Keywords
    II-VI semiconductors; cadmium compounds; copper compounds; indium compounds; optical films; solar cells; ternary semiconductors; zinc compounds; ZnO-CdS-CuInSe2 solar cells; active area efficiencies; cell parameters; diode factor value; optoelectronic properties; selenization technique; semiconductor; series resistance; short-circuit currents; window layers; Absorption; Atmosphere; Chemicals; Glass; Optical films; Photovoltaic cells; Reflectivity; Substrates; Windows; Zinc oxide;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialists Conference, 1991., Conference Record of the Twenty Second IEEE
  • Conference_Location
    Las Vegas, NV
  • Print_ISBN
    0-87942-636-5
  • Type

    conf

  • DOI
    10.1109/PVSC.1991.169338
  • Filename
    169338
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2545924