mm-Wave pulse-generation circuits in 65nm CMOS

Author

Tormanen, M.

Author_Institution

Dept. of Electr. & Inf. Technol., Lund Univ., Lund, Sweden

fYear

2014

fDate

10-12 Dec. 2014

Firstpage

50

Lastpage

53

Abstract

Three mm-wave pulse generation circuits fabricated in a standard 65nm CMOS process are presented. Two versions are based on the cross-coupled NMOS LC-VCO (500um × 300 um), and one is based on the Colpitts VCO (600um × 300 um). No additional buffers are used in the cross-coupled versions, as they are directly loaded by 50 Ohms through a balun. They can produce measured pulses exceeding 8dBm peak output power suitable for impulse radio (IR) systems, and also capable of producing pulses at 6.2pJ/pulse. A drive stage is used in the Colpitts based version to drive 50 Ohm measurement equipment, achieving phase coherent pulses with 8.6pJ/pulse, suitable for pulsed radar applications or IR systems.

Keywords

CMOS analogue integrated circuits; field effect MIMIC; millimetre wave generation; pulse generators; voltage-controlled oscillators; CMOS process; Colpitts VCO; IR systems; cross-coupled NMOS LC-VCO; impulse radio system; measurement equipment; mm-wave pulse-generation circuits; phase coherent pulses; pulsed radar; resistance 50 ohm; size 65 nm; CMOS integrated circuits; CMOS process; MOS devices; Oscillators; Pulse generation; Pulse measurements; CMOS; OOK; UWB; impulse radio (IR); pulse generator; pulsed oscillator;

fLanguage

English

Publisher

ieee

Conference_Titel

Integrated Circuits (ISIC), 2014 14th International Symposium on

Conference_Location

Singapore

Type

conf

DOI

10.1109/ISICIR.2014.7029531

Filename

7029531