MM11 based flash memory cell model including characterization procedure

Author

Saillet, B. ; Regnier, A. ; Portal, J.M. ; Delsuc, B. ; Laffont, R. ; Masson, P. ; Bouchakour, R.

Author_Institution

ST-Microelectron., Rousset

fYear

2006

fDate

21-24 May 2006

Abstract

The objective of this paper is to present a flash cell model for static and transient simulations. As a core element of this model, a Philips MOS model (MM11) model has been used coupled with the charge neutrality expression in the structure. The charge neutrality, including the charge trapped in the floating gate, is applied to determine the potential of the floating gate. From the floating gate potential, related to the terminal voltages, the drain current and the different charges present in the cell structure are calculated with the MM11 formulation. This pragmatic model takes into account the different injection mechanism (CHE, CHISEL and FN). Moreover, the characterization procedure developed under ICCAP to extract the MM11 model card as well as the tunnel current parameters is presented. This model has been successfully implemented in ELDO

Keywords

MOS memory circuits; charge injection; flash memories; integrated circuit modelling; integrated memory circuits; MM11 model card; Philips MOS model; charge injection mechanism; charge neutrality; charge trapping; flash memory cell; floating gate potential; tunnel current parameters; Channel hot electron injection; Circuit simulation; Electron traps; Equations; Flash memory; Flash memory cells; Nonvolatile memory; Semiconductor memory; Threshold voltage; Tunneling;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 2006. ISCAS 2006. Proceedings. 2006 IEEE International Symposium on

Conference_Location

Island of Kos

Print_ISBN

0-7803-9389-9

Type

conf

DOI

10.1109/ISCAS.2006.1693385

Filename

1693385