Title :
Optimization of windows in ZnO-CdS-CuInSe2 heterojunctions
Author :
Mauch, R.H. ; Hedstrom, J. ; Lincot, D. ; Ruckh, M. ; Kessler, J. ; Klinger, R. ; Stolt, L. ; Vedel, J. ; Schock, H.W.
Author_Institution :
Inst. fuer Phys. Elektronik, Stuttgart Univ., Germany
Abstract :
Major improvement of the performance of CuInSe2-based heterojunctions has been obtained by replacing (Zn,Cd)S by a multilayer window consisting of ZnO and thin CdS buffer. The tradeoff between conductivity of the ZnO:Al and infrared free carrier absorption has been studied in connection with a n+n doping gradient. Bath chemistry of the CBD-CdS, (in particular different Cd-salts like CdCl 2, CdI2, and CdSO4) plays an important role in the resulting cell performances. XPS and UPS analyses have been carried out in order to investigate contaminations, coverage of the CuInSe2 surface, and growth kinetics of the CdS layers grown in different baths. Optimized CdS thickness has been experimentally determined
Keywords :
II-VI semiconductors; cadmium compounds; copper compounds; crystal growth from melt; indium compounds; semiconductor growth; solar cells; ternary semiconductors; zinc compounds; ZnO-CdS-CuInSe2 solar cells; bath chemistry; chemical bath deposition; conductivity; heterojunctions; infrared free carrier absorption; multilayer window; n+n doping gradient; Chemistry; Conductivity; Doping; Electromagnetic wave absorption; Heterojunctions; Kinetic theory; Nonhomogeneous media; Surface contamination; Uninterruptible power systems; Zinc oxide;
Conference_Titel :
Photovoltaic Specialists Conference, 1991., Conference Record of the Twenty Second IEEE
Conference_Location :
Las Vegas, NV
Print_ISBN :
0-87942-636-5
DOI :
10.1109/PVSC.1991.169339
