A low-power, 10GS/s track-and-hold amplifier in SiGe BiCMOS technology

Author

Borokhovych, Yevgen ; Gustat, Hans ; Tillack, Bernd ; Heinemann, Bernd ; Lu, Yuan ; Kuo, Wei-Min Lance ; Li, Xiangtao ; Krithivasan, Ramkumar ; Cressler, John D.

Author_Institution

Dept. of Circuit Design, IHP, Frankfurt, Germany

fYear

2005

fDate

12-16 Sept. 2005

Firstpage

263

Lastpage

266

Abstract

This paper presents a low-power high-speed BiCMOS track-and-hold amplifier (THA). It combines the differential switched-emitter follower of (Vorenkamp and Verdaasdonk, 1992) with the low-droop output buffer presented in (Fiocchi et al., 2000). A test implementation consumes 70 mW of total power (30 mW THA). It works up to 15 GS/s, using minimum-size HBTs in a 0.25μm 200 GHz SiGe BiCMOS technology. At 10 GS/s and an input signal of 1 GHz, the achieved THD corresponds to 6.8 bits accuracy. To our knowledge, the present circuit is by far the fastest THA with low power consumption and high accuracy.

Keywords

BiCMOS analogue integrated circuits; Ge-Si alloys; buffer circuits; harmonic distortion; high-speed integrated circuits; low-power electronics; millimetre wave amplifiers; millimetre wave integrated circuits; sample and hold circuits; semiconductor materials; 0.25 micron; 1 GHz; 200 GHz; 30 mW; 70 mW; HBT circuits; SiGe; SiGe BiCMOS technology; differential switched-emitter follower; high-speed BiCMOS technology; low power consumption; low-droop output buffer; track-and-hold amplifier; Analog-digital conversion; Baseband; BiCMOS integrated circuits; CMOS technology; Circuit synthesis; Circuit testing; Communications technology; Energy consumption; Germanium silicon alloys; Silicon germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Circuits Conference, 2005. ESSCIRC 2005. Proceedings of the 31st European

Print_ISBN

0-7803-9205-1

Type

conf

DOI

10.1109/ESSCIR.2005.1541610

Filename

1541610