CIS solar cells by elemental sputtering

Author

Arya, R.R. ; Lommasson, T. ; Fieselmann, B. ; Russell, L. ; Carr, L. ; Catalano, A.

Author_Institution

Solarex Corp., Newton, PA, USA

fYear

1991

fDate

7-11 Oct 1991

Firstpage

903

Abstract

The key elements in the development of copper-indium-diselenide (CIS) solar cells are described. This includes material development of the window layer and the absorber layer. The window layer consists of CdS deposited by chemical solution growth and ZnO deposited by LPCVD. The CIS is deposited by sputtering from elemental targets. Films with proper composition and large grains have been deposited. Problems associated with sputtering Se are discussed. Solar cells fabricated on this material have resulted in an active-area conversion efficiency of 6.2%

Keywords

cadmium compounds; copper compounds; indium compounds; semiconductor growth; solar cells; sputtered coatings; ternary semiconductors; zinc compounds; 6.2 percent; CuInSe₂-ZnO-CdS solar cells; LPCVD; absorber layer; chemical solution growth; elemental sputtering; low-pressure chemical vapour deposition; semiconductor; window layer; Chemical elements; Computational Intelligence Society; Copper; Glass; Optical films; Photovoltaic cells; Sputtering; Substrates; Temperature; Zinc oxide;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference, 1991., Conference Record of the Twenty Second IEEE

Conference_Location

Las Vegas, NV

Print_ISBN

0-87942-636-5

Type

conf

DOI

10.1109/PVSC.1991.169340

Filename

169340