Title :
SOI four-gate transistors (G4-FETs) for high voltage analog applications
Author :
Chen, S. ; Vandersand, J. ; Blalock, B.J. ; Akarvardar, K. ; Cristoloveanu, S. ; Mojarra, M.
Author_Institution :
Dept. of Electr. & Comput. Eng., Tennessee Univ., Knoxville, TN, USA
Abstract :
A new approach for high-voltage analog applications that utilizes SOI four-gate transistors (G4-FETs) is presented. The proposed solution achieves high-voltage operation (10 V and higher) with no additional cost of fabrication (compatible with standard SOI) and minimal added design overhead compared to their MOSFET counterparts. Measurement results of high-voltage current mirrors and differential pairs show superior HV capability with small signal performance comparable to their MOSFET counterparts. By using the high-voltage current mirror and differential pair as basic building blocks, a differential amplifier is built and tested with a 20 V supply.
Keywords :
MOSFET; analogue circuits; current mirrors; differential amplifiers; field effect transistors; power integrated circuits; silicon-on-insulator; 20 V; MOSFET counterparts; differential amplifier; differential pair; four-gate transistor FET; high voltage analog applications; high-voltage current mirrors; silicon-on-insulator; Aerospace electronics; CMOS process; Circuit synthesis; Costs; Driver circuits; FETs; Fabrication; MOSFET circuits; Mirrors; Voltage;
Conference_Titel :
Solid-State Circuits Conference, 2005. ESSCIRC 2005. Proceedings of the 31st European
Print_ISBN :
0-7803-9205-1
DOI :
10.1109/ESSCIR.2005.1541622
