DocumentCode
2546588
Title
The effect of microstructure and strain in In/Cu/Mo/glass precursors on CdS/CuInSe2 photovoltaic device fabrication by selenization
Author
Albin, D. ; Carapella, J. ; Duda, A. ; Tuttle, J. ; Tennant, A. ; Noufi, R. ; Basol, B.M.
Author_Institution
Nat. Renewable Energy Lab., Golden, CO, USA
fYear
1991
fDate
7-11 Oct 1991
Firstpage
907
Abstract
Fabrication of CuInSe2 polycrystalline thin films by selenization can be considered a two-step process: the fabrication of a precursor structure consisting of In and Cu deposited onto a molybdenum-coated glass substrate, followed by a thermal anneal in H2Se. Definite correlations were observed between the initial state of the precursor, i.e., immediately following deposition by thermal evaporation, and the resulting device performance after selenization. In addition, the melting kinetics of the In/Cu layers, air-annealing sensitivity of the final device, and shifting of the space charge region are functions of the precursor history
Keywords
II-VI semiconductors; annealing; cadmium compounds; copper compounds; crystal microstructure; deformation; indium compounds; semiconductor growth; semiconductor thin films; solar cells; ternary semiconductors; CuInSe2-CdS solar cells; air-annealing sensitivity; device fabrication; melting kinetics; microstructure; polycrystalline thin films; precursor structure; selenization; semiconductor; space charge region; strain; thermal anneal; thermal evaporation; Annealing; Capacitive sensors; Fabrication; Glass; History; Kinetic theory; Microstructure; Space charge; Sputtering; Thin film devices;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Specialists Conference, 1991., Conference Record of the Twenty Second IEEE
Conference_Location
Las Vegas, NV
Print_ISBN
0-87942-636-5
Type
conf
DOI
10.1109/PVSC.1991.169341
Filename
169341
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