• DocumentCode
    254665
  • Title

    A compact Ka-band SPDT switch with high isolation

  • Author

    Chao Liu ; Qiang Li ; Yong-Zhong Xiong

  • Author_Institution
    Univ. of Electron. Sci. & Technol., Chengdu, China
  • fYear
    2014
  • fDate
    10-12 Dec. 2014
  • Firstpage
    304
  • Lastpage
    307
  • Abstract
    This paper presents a Ka-band high isolation single-pole-double-throw (SPDT) switch using 0.13 μm CMOS process. The switch has a measured insertion loss of 2.7-3.7 dB and an input 1-dB compression power (P1dB) of 8 dBm at 35 GHz. Via using the shunt NMOS topology and high quality factor match networks, 33-50 dB measured isolation is obtained within the frequency range of 30-45 GHz. The switch core occupies 160×180 μm2 chip area.
  • Keywords
    CMOS integrated circuits; Q-factor; field effect MIMIC; field effect MMIC; microwave switches; CMOS process; compact Ka-band SPDT switch; frequency 30 GHz to 45 GHz; high quality factor match networks; input compression power; loss 2.7 dB to 3.7 dB; loss 33 dB to 50 dB; shunt NMOS topology; single-pole-double-throw switch; size 0.13 mum; Inductors; Integrated circuit modeling; Loss measurement; MOSFET; Switches; Switching circuits; CMOS; Ka-band; SPDT; T/R switch; high isolation;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Integrated Circuits (ISIC), 2014 14th International Symposium on
  • Conference_Location
    Singapore
  • Type

    conf

  • DOI
    10.1109/ISICIR.2014.7029563
  • Filename
    7029563
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=254665