A fully integrated 166-GHz frequency synthesizer in 0.13-μm SiGe BiCMOS for D-band applications

This paper presents a fully integrated 166-GHz frequency synthesizer (FS) in 0.13-μm SiGe BiCMOS technology. The proposed FS consists of a 20-GHz phase-locked loop (PLL) and a frequency multiplier including a doubler (×2) and a quadrupler (×4). The FS generates the D-band output signals from 164.08 to 166.19 GHz. At 166.19 GHz, the measured phase noises at 100-kHz and 1-MHz offset frequencies are −54.07 dBc/Hz and −72.29 dBc/Hz, respectively. The total dc power dissipation of the FS is around 110 mW and the chip area is 2.16 × 0.57 mm² including all testing pads. To the best of authors´ knowledge, the proposed FS achieves the lowest power dissipation above 100 GHz to date and has great potential to be used for high-integration D-band applications.