DocumentCode
2546963
Title
A precision high voltage wave-shaper for multi-Gbit source side injection MLC NOR flash memory
Author
Tran, Hai V. ; Saiki, William John ; Frayer, Jack Edward ; Vu, Thuan ; Ly, Anh ; Nguyen, Sang Thanh ; Nguyen, Hung Quoc ; Lee, Douglas James ; Briner, Michael Stephen
Author_Institution
Silicon Storage Technol., Inc., Sunnyvale, CA, USA
fYear
2005
fDate
12-16 Sept. 2005
Firstpage
367
Lastpage
370
Abstract
A precision high voltage wave-shaper is demonstrated in 0.18μm 64-256Meg NOR SSI flash MLC memory chip to demonstrate feasibility of a ∼8bit accuracy HV delivering system for 1.8V multi giga bit (>4 Gbit) density 4bits/cell multilevel memory. Dynamic adaptive HV bias scheme (DYAHV) and unique nested array driving loop shown for the first time in this work.
Keywords
NOR circuits; flash memories; 0.18 micron; 1.8 V; 64 to 256 Mbit; HV delivering system; MLC NOR flash memory; driving loop; dynamic adaptive HV bias scheme; high voltage wave-shaper; multilevel memory cell technology; source side injection; unique nested array; Adaptive arrays; Circuits; Decoding; Digital control; Environmental factors; Flash memory; Lifting equipment; Log periodic antennas; Silicon; Voltage control;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Circuits Conference, 2005. ESSCIRC 2005. Proceedings of the 31st European
Print_ISBN
0-7803-9205-1
Type
conf
DOI
10.1109/ESSCIR.2005.1541636
Filename
1541636
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