A back-to-back horn-antenna quasi-optical amplifier

Author

Chi, C.-Y. ; Rebeiz, G.M.

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA

fYear

1993

fDate

June 28 1993-July 2 1993

Firstpage

660

Abstract

A quasi-optical amplifier suitable for Gaussian-beam applications is presented. The amplifier is based on the integrated horn antenna and uses polarization duplexing to isolate the output beam from the input beam. A prototype hybrid amplifier with a measured gain of 10.6 dB at 6 GHz is reported. The amplifier design is uniplanar and compact, and is compatible with the fabrication process of high electron mobility transistors (HEMTs) at millimeter-wave frequencies. The design is single-moded and therefore can be used in existing mm-wave systems as a low-noise amplifier stage before the RF mixer or as an amplifier stage in the transmitting circuit.<>

Keywords

high electron mobility transistors; horn antennas; microwave amplifiers; millimetre wave field effect transistors; 10.6 dB; 6 GHz; HEMTs; amplifier design; high electron mobility transistors; hybrid amplifier; integrated horn antenna; low-noise amplifier stage; polarization duplexing; quasi-optical amplifier; Antenna measurements; Gain measurement; Gaussian processes; HEMTs; Horn antennas; Low-noise amplifiers; MODFETs; Polarization; Prototypes; Radiofrequency amplifiers;

fLanguage

English

Publisher

ieee

Conference_Titel

Antennas and Propagation Society International Symposium, 1993. AP-S. Digest

Conference_Location

Ann Arbor, MI, USA

Print_ISBN

0-7803-1246-5

Type

conf

DOI

10.1109/APS.1993.385260

Filename

385260