Title :
Noise considerations for a very low threshold semiconductor detector system
Author :
Leon, Javier ; Knecht, A. ; Miller, M.L. ; Peterson, D.A. ; Robertson, R.G.H. ; Van Wechel, T.D.
Author_Institution :
Dept. of Phys., Univ. of Washington, Seattle, WA, USA
fDate :
Oct. 27 2012-Nov. 3 2012
Abstract :
The search for dark matter motivates development of a semiconductor detector system with a very low noise threshold. The CoGeNT and MAJORANA projects both make use of hyper-pure Ge detectors and are in principle sensitive to the ionization signals produced by dark matter particles scattering from Ge nuclei if sub-keV thresholds can be achieved.We describe progress toward mitigating noise on several fronts: the lIf noise that is inherent in capacitors and may also be present in the depletion layer of pn junctions, and the aliasing noise that is endemic with FFTs taken digitally over a large frequency range. An operating front-end design with an ENC (equivalent noise charge) of 4.5 electrons RMS has been demonstrated.
Keywords :
1/f noise; dark matter; germanium radiation detectors; nuclear electronics; p-n junctions; 1/f noise; CoGeNT project; Ge nuclei; MAJORANA project; dark matter particle scattering; depletion layer; electron RMS; equivalent noise charge; front-end design; hyperpure Ge detectors; ionization signals; low noise threshold; p-n junctions; semiconductor detector system; subkeV thresholds;
Conference_Titel :
Nuclear Science Symposium and Medical Imaging Conference (NSS/MIC), 2012 IEEE
Conference_Location :
Anaheim, CA
Print_ISBN :
978-1-4673-2028-3
DOI :
10.1109/NSSMIC.2012.6551229
