DocumentCode
2547684
Title
A novel four-quadrant analog multiplier using SOI four-gate transistors (G4-FETs)
Author
Akarvardar, K. ; Chen, S. ; Blalock, B.J. ; Cristoloveanu, S. ; Gentil, P. ; Mojarradi, M.
Author_Institution
IMEP, Grenoble, France
fYear
2005
fDate
12-16 Sept. 2005
Firstpage
499
Lastpage
502
Abstract
A novel analog multiplier using SOI four-gate transistors (G4-FETs) is presented. Thanks to the multiple inputs of the G4-FET that may be biased independently, the number of transistors in the proposed circuit is dramatically reduced, compared to conventional single-gate MOSFET based multipliers. Only four G4-FETs are needed to build the multiplier core. The circuit is feasible with a standard SOI CMOS process. Two different configurations, both based on the linear modulation of the front-gate threshold voltage by the junction-gates, are presented. This paper addresses the theoretical analysis as well as the preliminary measurement results.
Keywords
CMOS integrated circuits; analogue multipliers; field effect transistors; integrated circuit design; silicon-on-insulator; G4-FET; MOSFET; SOI CMOS process; four gate transistors; four-quadrant analog multiplier; front gate threshold voltage; junction gates; linear modulation; Aerospace electronics; CMOS process; Electrons; FETs; Laboratories; MOSFET circuits; Propulsion; Switches; Threshold voltage; Transconductance;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Circuits Conference, 2005. ESSCIRC 2005. Proceedings of the 31st European
Print_ISBN
0-7803-9205-1
Type
conf
DOI
10.1109/ESSCIR.2005.1541669
Filename
1541669
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