Title :
A novel four-quadrant analog multiplier using SOI four-gate transistors (G4-FETs)
Author :
Akarvardar, K. ; Chen, S. ; Blalock, B.J. ; Cristoloveanu, S. ; Gentil, P. ; Mojarradi, M.
Author_Institution :
IMEP, Grenoble, France
Abstract :
A novel analog multiplier using SOI four-gate transistors (G4-FETs) is presented. Thanks to the multiple inputs of the G4-FET that may be biased independently, the number of transistors in the proposed circuit is dramatically reduced, compared to conventional single-gate MOSFET based multipliers. Only four G4-FETs are needed to build the multiplier core. The circuit is feasible with a standard SOI CMOS process. Two different configurations, both based on the linear modulation of the front-gate threshold voltage by the junction-gates, are presented. This paper addresses the theoretical analysis as well as the preliminary measurement results.
Keywords :
CMOS integrated circuits; analogue multipliers; field effect transistors; integrated circuit design; silicon-on-insulator; G4-FET; MOSFET; SOI CMOS process; four gate transistors; four-quadrant analog multiplier; front gate threshold voltage; junction gates; linear modulation; Aerospace electronics; CMOS process; Electrons; FETs; Laboratories; MOSFET circuits; Propulsion; Switches; Threshold voltage; Transconductance;
Conference_Titel :
Solid-State Circuits Conference, 2005. ESSCIRC 2005. Proceedings of the 31st European
Print_ISBN :
0-7803-9205-1
DOI :
10.1109/ESSCIR.2005.1541669