Title :
Polycrystalline CdTe solar cells by pulsed laser deposition
Author :
Compaan, A. ; Bhat, A. ; Tabory, C. ; Liu, S. ; Li, Y. ; Savage, M.E. ; Shao, M. ; Tsien, L. ; Bohn, R.G.
Author_Institution :
Dept. of Phys. & Astron., Toledo Univ., OH, USA
Abstract :
Polycrystalline CdS/CdTe heterojunctions have been grown by pulsed laser-driven physical vapor deposition (LDPVD) using an XeCl excimer laser at 308 nm. The LDPVD process accommodates thin-film growth at low substrate temperatures (⩽300°C), while permitting considerable control over the physical conditions of the deposition plume. The congruent evaporation provides good film stoichiometry and the use of multiple targets facilitates heterojunction fabrication in a single vacuum chamber. Polycrystalline films were grown on alkali-free glass and on SnO2-coated glass from pressed powder targets in a vacuum of ~5×10-6 torr. Optimum growth occurred near 280°C with growth rates of ~0.5 Å/pulse. Devices were fabricated on the films after post-growth annealing and characterized by I-V and spectral quantum efficiency measurements
Keywords :
II-VI semiconductors; cadmium compounds; laser beam applications; semiconductor growth; semiconductor thin films; solar cells; stoichiometry; vacuum deposited coatings; 280 degC; 308 nm; CdS-CdTe solar cells; I-V measurements; LDPVD; XeCl excimer laser; alkali-free glass; congruent evaporation; deposition plume; film stoichiometry; polycrystalline heterojunctions; post-growth annealing; pressed powder targets; pulsed laser-driven physical vapor deposition; semiconductor thin films; spectral quantum efficiency measurements; thin-film growth; vacuum chamber; Chemical vapor deposition; Glass; Heterojunctions; Laser theory; Optical pulses; Photovoltaic cells; Pulsed laser deposition; Sputtering; Substrates; Temperature control;
Conference_Titel :
Photovoltaic Specialists Conference, 1991., Conference Record of the Twenty Second IEEE
Conference_Location :
Las Vegas, NV
Print_ISBN :
0-87942-636-5
DOI :
10.1109/PVSC.1991.169350
