DocumentCode
2549004
Title
A promising lead-free material for flip-chip bumps: Sn-Cu-RE
Author
Wu, C. M Lawrence
Author_Institution
Dept. of Phys. & Mater. Sci., City Univ. of Hong Kong, China
fYear
2002
fDate
14-16 Oct. 2002
Firstpage
17
Lastpage
26
Abstract
In advanced electronic packaging, flip-chip (FC) bumps are required to be reliable and inexpensive. The Sn-0.7%Cu alloy has been considered as a lead-free material for FC bumps. Various small amounts of rare earth (RE) elements, which are mainly Ce and La, have been added to the Sn-0.7%Cu alloy to form new alloys. It was found that the new alloys exhibit mechanical properties superior to that of the Sn-0.7%Cu alloy. In particular, the addition of up to 0.5% of RE elements is found to refine the effective grain size and provide a fine and uniform distribution of Cu6Sn5 in the solidified microstructure. After aging at high temperature, the microstructure of Sn0.7%Cu-0.5%RE alloy is more stable than that of the Sn-0.7%Cu alloy. Tensile, creep and microhardness tests were, conducted on the solder alloys. It was found that significant improvements of the tensile strength and creep resistance were obtained with RE elements addition. These results have made the Sn-Cu-RE alloy to be very attractive as a suitable material for FC bumps.
Keywords
alloying additions; cerium alloys; copper alloys; creep; creep testing; flip-chip devices; grain refinement; grain size; hardness testing; integrated circuit packaging; lanthanum alloys; microhardness; soldering; tensile strength; tensile testing; tin alloys; Ce; La; RE elements addition; Sn-Cu-RE; SnCuLaCe; aging; creep resistance; creep tests; effective grain size; electronic packaging; fine uniform distribution; flip-chip bumps; lead-free material; mechanical properties; microhardness tests; microstructure; rare earth elements; solder alloys; solidified microstructure; tensile strength; tensile tests; Aging; Creep; Electronics packaging; Environmentally friendly manufacturing techniques; Grain size; Lead; Mechanical factors; Microstructure; Temperature; Tin;
fLanguage
English
Publisher
ieee
Conference_Titel
Advanced Semiconductor Devices and Microsystems, 2002. The Fourth International Conference on
Print_ISBN
0-7803-7276-X
Type
conf
DOI
10.1109/ASDAM.2002.1088465
Filename
1088465
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