• DocumentCode
    2549038
  • Title

    Fundamental research in crystalline silicon photovoltaic materials: program perspective

  • Author

    Sopori, Bhushan L. ; Benner, John P.

  • Author_Institution
    Nat. Renewable Energy Lab., Golden, CO, USA
  • fYear
    1991
  • fDate
    7-11 Oct 1991
  • Firstpage
    973
  • Abstract
    The directions and goals for future research in crystalline silicon materials for high-efficiency solar cells are identified. Currently, the substrates produced by technologies of commercial interest have lower chemical purity and crystal perfection than those of microelectronics-grade wafers. The material quality of these substrates can be improved by post-growth treatments that can be incorporated in the cell fabrication process schedule. Such treatments, applicable to low-cost single- and polycrystalline substrates, include impurity gettering, defect passivation, and defect annihilation. Development of these processes requires a better understanding of point-defect phenomena involving interactions of defects and impurities
  • Keywords
    elemental semiconductors; getters; passivation; silicon; Si; crystalline Si; defect annihilation; defect interactions; defect passivation; high-efficiency solar cells; impurity gettering; impurity interactions; material quality; photovoltaic materials; point-defect phenomena; post-growth treatments; substrates; Chemical technology; Crystalline materials; Crystallization; Fabrication; Gettering; Impurities; Photovoltaic cells; Photovoltaic systems; Silicon; Solar power generation;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialists Conference, 1991., Conference Record of the Twenty Second IEEE
  • Conference_Location
    Las Vegas, NV
  • Print_ISBN
    0-87942-636-5
  • Type

    conf

  • DOI
    10.1109/PVSC.1991.169353
  • Filename
    169353