DocumentCode
2549038
Title
Fundamental research in crystalline silicon photovoltaic materials: program perspective
Author
Sopori, Bhushan L. ; Benner, John P.
Author_Institution
Nat. Renewable Energy Lab., Golden, CO, USA
fYear
1991
fDate
7-11 Oct 1991
Firstpage
973
Abstract
The directions and goals for future research in crystalline silicon materials for high-efficiency solar cells are identified. Currently, the substrates produced by technologies of commercial interest have lower chemical purity and crystal perfection than those of microelectronics-grade wafers. The material quality of these substrates can be improved by post-growth treatments that can be incorporated in the cell fabrication process schedule. Such treatments, applicable to low-cost single- and polycrystalline substrates, include impurity gettering, defect passivation, and defect annihilation. Development of these processes requires a better understanding of point-defect phenomena involving interactions of defects and impurities
Keywords
elemental semiconductors; getters; passivation; silicon; Si; crystalline Si; defect annihilation; defect interactions; defect passivation; high-efficiency solar cells; impurity gettering; impurity interactions; material quality; photovoltaic materials; point-defect phenomena; post-growth treatments; substrates; Chemical technology; Crystalline materials; Crystallization; Fabrication; Gettering; Impurities; Photovoltaic cells; Photovoltaic systems; Silicon; Solar power generation;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Specialists Conference, 1991., Conference Record of the Twenty Second IEEE
Conference_Location
Las Vegas, NV
Print_ISBN
0-87942-636-5
Type
conf
DOI
10.1109/PVSC.1991.169353
Filename
169353
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