Title :
Formation of YBa2Cu3O7-x/MgO and YBa2Cu3O7-x/Si thin film structure by laser pulse crystallisation and annealing
Author :
Kotlyarchuk, Bobdan K. ; Savchuk, V.K.
Author_Institution :
Inst. for Appl. Problems of Mech. & Math., Lviv, Ukraine
Abstract :
The results of the theoretical and experimental study of laser pulse crystallisation and annealing of the YBa2Cu3O7-x high-temperature superconducting amorphous layers are presented in the paper. It is determined that for each given film thickness and type of substrate there exists a optimal pressure of oxygen, laser pulse energy density, its duration and wavelength at which the conditions Of thermodynamic stability of the film compound is preserved.
Keywords :
amorphous state; barium compounds; crystallisation; elemental semiconductors; high-temperature superconductors; laser beam annealing; magnesium compounds; silicon; superconducting thin films; thermal stability; yttrium compounds; MgO; Si; YBa2Cu3O7-x; amorphous layers; film thickness; high-temperature superconductor; laser annealing; laser pulse crystallisation; laser pulse energy density; pulse laser radiation heating; thermodynamic stability; Amorphous materials; Annealing; Crystallization; High temperature superconductors; Laser stability; Laser theory; Optical pulses; Substrates; Superconducting epitaxial layers; Superconducting films;
Conference_Titel :
Advanced Semiconductor Devices and Microsystems, 2002. The Fourth International Conference on
Print_ISBN :
0-7803-7276-X
DOI :
10.1109/ASDAM.2002.1088470
