Title :
High-voltage Recessed-gate GaAs Field Effect Transistors
Author :
Hadizad, P. ; Gundersen, M.A. ; Ren, F.
Author_Institution :
University of Southern California
Keywords :
Conducting materials; FETs; Gallium arsenide; MOSFETs; Power semiconductor devices; Power semiconductor switches; Silicon; Telecommunication switching; Thyristors; Voltage;
Conference_Titel :
Power Modulator Symposium, 1994., Twenty-First International
DOI :
10.1109/MODSYM.1994.597047
