• DocumentCode
    2549160
  • Title

    Novel electrostatically tunable FeGaB/(Si)/PMN-PT multiferroic heterostructures for microwave application

  • Author

    Lou, Jing ; Reed, David ; Liu, Ming ; Pettiford, Carl ; Sun, Nian X.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Northeastern Univ., Boston, MA, USA
  • fYear
    2009
  • fDate
    7-12 June 2009
  • Firstpage
    33
  • Lastpage
    36
  • Abstract
    Strong magnetoelectric (ME) coupling can be realized in multiferroic heterostructures, which have led to a variety of devices. However, it has been challenging in achieving strong ME coupling at microwave frequencies. Here, we report on novel FeGaB/Si/PMN-PT and FeGaB/PMN-PT microwave multiferroic heterostructures, which show strong ME coupling at both DC and microwave frequencies. A high microwave frequency tunability of Deltaf = 900 MHz or Deltaf/f = 58%, which is equivalent to a magnetic field tunable range of ~30 Oe, was demonstrated in the FeGaB/Si/PMN-PT heterostructures. By eliminating the Si substrate, which acts to impede the ME coupling, a much larger tunable magnetic field range of ~330 Oe was observed in the FeGaB/PMN-PT heterostructures. These multiferroic heterostructures with strong ME coupling provide great opportunities for electrostatically tunable ME microwave devices.
  • Keywords
    elemental semiconductors; ferrimagnetic materials; gallium compounds; iron compounds; lead compounds; magnesium compounds; magnetic fields; microwave devices; multiferroics; silicon; FeGaB-Si-PBMgNb-PbTi; electrostatically tunable multiferroic heterostructures; frequency 900 MHz; high microwave frequency tunability; magnetic field; magnetoelectric coupling; microwave devices; microwave multiferroic heterostructures; Amorphous magnetic materials; Frequency; Magnetic anisotropy; Magnetic films; Magnetic materials; Magnetic resonance; Magnetostriction; Microwave devices; Perpendicular magnetic anisotropy; Saturation magnetization; FeGaB; Magnetoelectric; Microwave; Multiferroic; Tunable Devices;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Symposium Digest, 2009. MTT '09. IEEE MTT-S International
  • Conference_Location
    Boston, MA
  • ISSN
    0149-645X
  • Print_ISBN
    978-1-4244-2803-8
  • Electronic_ISBN
    0149-645X
  • Type

    conf

  • DOI
    10.1109/MWSYM.2009.5165625
  • Filename
    5165625