Synthesis and investigation of nanocrystalline SiC properties in sensor applications

In this work, thermodynamical rules of nanocrystalline SiC synthesis by solid state reactions are considered. Synthesis of SiC is likely at a temperature of more than 750 K under pressure of 10^-6 Torr. Experimental research of electro-physical properties of nanocrystalline SiC samples is reported. The resistances of SiC samples are 48.5 MΩ and 4.95 MΩ and the thermal resistance coefficients are 3.58×10^-4 K^-1 and -3.89×10^-3 K^-1 depending on the fabrication regimes. It is shown that nanocrystalline SiC is a promising material for manufacturing chemical sensors.