PECVD nitrogen doped a-SiC:H films: properties

Author

Huran, J. ; Hotovy, I. ; Kobzev, A.P. ; Balalykin, N.I.

Author_Institution

Inst. of Electr. Eng., Slovak Acad. of Sci., Bratislava, Slovakia

fYear

2002

fDate

14-16 Oct. 2002

Firstpage

67

Lastpage

70

Abstract

We present properties of nitrogen-doped amorphous silicon carbide films grown by PECVD and annealed by a pulsed electron beam. Samples with different amounts of N were achieved by a small addition of ammonia NH₃ into the gas mixture of silane SiH₄ and methane CH₄, which were directly introduced into the reaction chamber. A simulation of the RBS spectra was used to calculate the concentration of carbon, silicon and nitrogen. The current-voltage (I-V) characteristics of diodes made of doped and irradiated SiC films grown on silicon substrates were studied.

Keywords

Rutherford backscattering; amorphous semiconductors; electron beam annealing; hydrogen; nitrogen; plasma CVD coatings; refractive index; semiconductor thin films; silicon compounds; wide band gap semiconductors; I-V characteristics; PECVD; RBS; Si; SiC:H,N; ammonia; amorphous films; methane; nitrogen-doped films; pulsed electron beam annealing; silane; silicon substrates; Aerospace materials; Annealing; Electrodes; Electron beams; Nitrogen; Plasma temperature; Semiconductor diodes; Semiconductor films; Silicon carbide; Space exploration;

fLanguage

English

Publisher

ieee

Conference_Titel

Advanced Semiconductor Devices and Microsystems, 2002. The Fourth International Conference on

Print_ISBN

0-7803-7276-X

Type

conf

DOI

10.1109/ASDAM.2002.1088476

Filename

1088476