Title :
Ultra-low power 90nm 6T SRAM cell for wireless sensor network applications
Author :
Ho, D. ; Iniewski, K. ; Kasnavi, S. ; Ivanov, Alexander ; Natarajan, S.
Author_Institution :
Dept. of Elec. & Comp. Eng., British Columbia Univ., Vancouver, BC
Abstract :
This paper presents a comparative study of leakage reduction techniques applied to a 90 nm 6T SRAM to find an optimal design for ultra-low power wireless sensor applications. A 4-Kb SRAM implemented with the proposed techniques has a leakage as low as 26.5 nA in the idle mode, a 189times improvement over a memory without applying such techniques
Keywords :
SRAM chips; integrated circuit design; low-power electronics; wireless sensor networks; 4 kByte; 90 nm; leakage reduction; ultra-low power SRAM cell; wireless sensor network; Circuits; Electricity supply industry; Logic design; Monitoring; Paper technology; Power engineering and energy; Power system reliability; Random access memory; Threshold voltage; Wireless sensor networks;
Conference_Titel :
Circuits and Systems, 2006. ISCAS 2006. Proceedings. 2006 IEEE International Symposium on
Conference_Location :
Island of Kos
Print_ISBN :
0-7803-9389-9
DOI :
10.1109/ISCAS.2006.1693538
