Title :
InGaAs/InP avalanche photodiodes with a thin multiplication layer
Author :
Hasko, D. ; Uherek, F. ; Mika, F.
Author_Institution :
Dept. of Microelectron., Slovak Univ. of Technol., Bratislava, Slovakia
Abstract :
We report on the design and characterization of a low-noise and low voltage InGaAs/InP avalanche photodiode (APD) grown by metalorganic chemical vapour deposition (MOCVD). The investigated InGaAs/InP APD structure for lightwave transmission systems consists of separate absorption InGaAs, charge InP and InP multiplication layers (SACM). The designed APD without a guard ring exhibits a dark current less than 5 μA near the breakdown voltage (VB ≈ 48 V). External quantum efficiency >75% (at λ = 1300 nm), avalanche gain up to 5 and capacitance lower than 1.1 pF at the operating voltage were achieved. The measured temperature dependence of current-voltage characteristics, capacitance-voltage and spectral characteristics are presented.
Keywords :
III-V semiconductors; MOCVD; avalanche photodiodes; capacitance; dark conductivity; gallium arsenide; indium compounds; low-power electronics; semiconductor device breakdown; semiconductor device measurement; semiconductor device noise; semiconductor growth; 1.1 pF; 1300 nm; 48 V; 5 muA; InGaAs/InP APD structure; InGaAs/InP avalanche photodiodes; MOCVD; absorption layers; avalanche gain; breakdown voltage; capacitance; capacitance-voltage characteristics; charge layers; current-voltage characteristics; dark current; design; external quantum efficiency; lightwave transmission systems; low voltage InGaAs/InP avalanche photodiode; low-noise; metalorganic chemical vapour deposition; multiplication layers; operating voltage; spectral characteristics; temperature dependence; thin multiplication layer; Absorption; Avalanche photodiodes; Breakdown voltage; Chemical vapor deposition; Dark current; Indium gallium arsenide; Indium phosphide; Low voltage; MOCVD; Quantum capacitance;
Conference_Titel :
Advanced Semiconductor Devices and Microsystems, 2002. The Fourth International Conference on
Print_ISBN :
0-7803-7276-X
DOI :
10.1109/ASDAM.2002.1088483
