Title :
Role of minority carrier extraction in performance of radiation detectors based on semi-insulating GaAs
Author :
Dubecký, F. ; Zat´ko, B. ; Necas, V. ; Sekácová, M. ; Huran, J. ; Bohácek, P. ; Ferrari, C. ; Kordo, P. ; Forster, Alexander
Author_Institution :
Inst. of Electr. Eng., Slovak Acad. of Sci., Bratislava, Slovakia
Abstract :
In the work, evidence and role of minority carrier extraction at the high defect concentration interface metal-semi-insulating (SI) GaAs is presented. Improvement of performance of radiation detector based on SI GaAs if extraction system is used as quasi-ohmic "back" electrode is demonstrated.
Keywords :
III-V semiconductors; gallium arsenide; minority carriers; particle detectors; semiconductor device measurement; GaAs; defect concentration interface; metal-semi-insulating interface; minority carrier extraction; quasi-ohmic back electrode; radiation detectors; semi-insulating GaAs; Electrodes; Gallium arsenide; Gamma ray detection; Gamma ray detectors; Leakage current; Molecular beam epitaxial growth; Ohmic contacts; Pulse amplifiers; Radiation detectors; Schottky barriers;
Conference_Titel :
Advanced Semiconductor Devices and Microsystems, 2002. The Fourth International Conference on
Print_ISBN :
0-7803-7276-X
DOI :
10.1109/ASDAM.2002.1088495
