• DocumentCode
    2549576
  • Title

    Investigation of 4H-SiC diode with RuO2 Schottky contact by DLTS

  • Author

    Stuchliková, E. ; Harmatha, L. ; Buc, D. ; Helmersson, U. ; Wahab, Q.

  • Author_Institution
    Dept. of Microelectron., Slovak Univ. of Technol., Bratislava, Slovakia
  • fYear
    2002
  • fDate
    14-16 Oct. 2002
  • Firstpage
    153
  • Lastpage
    156
  • Abstract
    Deep level transient spectroscopy measurements were performed on silicon carbide (4H-SiC) Schottky diodes with RuO2 Schottky contacts in order to investigate electrical properties of a new type of Schottky diode. Two electron deep energy levels were detected on this Schottky diode. Their thermal activation energies are 0.56 eV and 0.85 eV, respectively, referred to the conductance band. The origin of these deep levels is still under investigation.
  • Keywords
    Schottky diodes; deep level transient spectroscopy; deep levels; ruthenium compounds; semiconductor device measurement; silicon compounds; wide band gap semiconductors; 4H-SiC diode; DLTS; RuO2; RuO2 Schottky contact; Schottky diodes; SiC; deep level transient spectroscopy; electron deep energy levels; thermal activation energy; Capacitance; Physics; Schottky barriers; Schottky diodes; Semiconductor diodes; Silicon carbide; Spectroscopy; Substrates; Temperature; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Advanced Semiconductor Devices and Microsystems, 2002. The Fourth International Conference on
  • Print_ISBN
    0-7803-7276-X
  • Type

    conf

  • DOI
    10.1109/ASDAM.2002.1088497
  • Filename
    1088497
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2549576