DocumentCode :
2549591
Title :
A new low power full adder cell in CMOS inverter
Author :
Zandkarimi, G. ; Navi, K. ; Mokari, H.
Author_Institution :
Dept. of Electr. Eng., Islamic Azad Univ. (IAU), Tehran, Iran
fYear :
2010
fDate :
15-17 June 2010
Firstpage :
1
Lastpage :
5
Abstract :
In this paper we present a novel 1-bit full adder cell. The cell offer less power consumption in comparison with the conventional and current implementation of the full adder cell, especially at low voltages. All transitions are used for simulation to obtain the delay and the power consumption parameters. Simulation is improved in term of power consumption. The new full adder cell is simulated at 0.18_μm CMOS technology, using HSPICE.
Keywords :
CMOS digital integrated circuits; adders; logic gates; low-power electronics; CMOS inverter; HSPICE; less power consumption; low power full adder cell; size 0.18 mum; Adders; CMOS integrated circuits; Capacitors; Delay; Inverters; Logic gates; Power demand;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Intelligent and Advanced Systems (ICIAS), 2010 International Conference on
Conference_Location :
Kuala Lumpur, Malaysia
Print_ISBN :
978-1-4244-6623-8
Type :
conf
DOI :
10.1109/ICIAS.2010.5716112
Filename :
5716112
Link To Document :
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