Characterization of delta-doped GaAs grown by MOVPE

Author

Gurnik, P. ; Beno, Peter ; Srnanek, R. ; Tlaczala, M. ; Sciana, B. ; Harmatha, L.

Author_Institution

Dept. of Microelectron., Slovak Univ. of Technol., Bratislava, Slovakia

fYear

2002

fDate

14-16 Oct. 2002

Firstpage

157

Lastpage

160

Abstract

The resolution of the capacitance-voltage (C-V) technique on single- and double-delta (δ)-doped GaAs is shown to be given by the breadth of dopant distribution. The experimental C-V profiles demonstrate that impurities are spatially localized on the length scale of the lattice constant. The sharp distribution of dopants is assessed by the secondary-ion mass spectroscopy.

Keywords

III-V semiconductors; MOCVD coatings; capacitance; doping profiles; gallium arsenide; secondary ion mass spectra; semiconductor epitaxial layers; C-V profile; GaAs; MOVPE; capacitance-voltage; delta-doped GaAs; dopant distribution; lattice constant; secondary-ion mass spectroscopy; Atomic layer deposition; Capacitance; Doping profiles; Epitaxial growth; Epitaxial layers; Gallium arsenide; Motorcycles; Semiconductor devices; Semiconductor materials; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Advanced Semiconductor Devices and Microsystems, 2002. The Fourth International Conference on

Print_ISBN

0-7803-7276-X

Type

conf

DOI

10.1109/ASDAM.2002.1088498

Filename

1088498

Link To Document

https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2549603