Optical gain in GaInNAs/GaAs multi-quantum well structures

Author

Kvietkova, J. ; Hetterich, M. ; De Jauregui, D. Saez ; Egorov, A.Yu. ; Riechert, H.

Author_Institution

Inst. fur Angewandte Phys., Univ. Karlsruhe, Munchen, Germany

fYear

2002

fDate

14-16 Oct. 2002

Firstpage

175

Lastpage

178

Abstract

We present the experimental investigation of the optical gain in GaInNAs/GaAs multi-quantum well structures using the variable stripe length method. The amplified spontaneous edge emission was measured at different excitation intensities and stripe lengths. We observed an exponential increase in the edge emission intensity with increasing excitation density. The obtained values of the optical gain are typically in the order of 20 cm^-1.

Keywords

III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; quantum well lasers; semiconductor quantum wells; semiconductor superlattices; superradiance; GaInNAs-GaAs; GaInNAs/GaAs multi-quantum well structures; amplified spontaneous edge emission; edge emission intensity; excitation density; excitation intensities; exponential increase; optical gain; stripe lengths; variable stripe length method; Gain measurement; Gallium arsenide; Indium gallium arsenide; Length measurement; Nitrogen; Optical materials; Optical saturation; Plasma temperature; Quantum well devices; Stimulated emission;

fLanguage

English

Publisher

ieee

Conference_Titel

Advanced Semiconductor Devices and Microsystems, 2002. The Fourth International Conference on

Print_ISBN

0-7803-7276-X

Type

conf

DOI

10.1109/ASDAM.2002.1088500

Filename

1088500