Title :
Optical gain in GaInNAs/GaAs multi-quantum well structures
Author :
Kvietkova, J. ; Hetterich, M. ; De Jauregui, D. Saez ; Egorov, A.Yu. ; Riechert, H.
Author_Institution :
Inst. fur Angewandte Phys., Univ. Karlsruhe, Munchen, Germany
Abstract :
We present the experimental investigation of the optical gain in GaInNAs/GaAs multi-quantum well structures using the variable stripe length method. The amplified spontaneous edge emission was measured at different excitation intensities and stripe lengths. We observed an exponential increase in the edge emission intensity with increasing excitation density. The obtained values of the optical gain are typically in the order of 20 cm-1.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; quantum well lasers; semiconductor quantum wells; semiconductor superlattices; superradiance; GaInNAs-GaAs; GaInNAs/GaAs multi-quantum well structures; amplified spontaneous edge emission; edge emission intensity; excitation density; excitation intensities; exponential increase; optical gain; stripe lengths; variable stripe length method; Gain measurement; Gallium arsenide; Indium gallium arsenide; Length measurement; Nitrogen; Optical materials; Optical saturation; Plasma temperature; Quantum well devices; Stimulated emission;
Conference_Titel :
Advanced Semiconductor Devices and Microsystems, 2002. The Fourth International Conference on
Print_ISBN :
0-7803-7276-X
DOI :
10.1109/ASDAM.2002.1088500
