Title :
Chemical beveling of Si/SiGe structures for structure and material analysis by Raman spectroscopy
Author :
Srnanck, R. ; Kinder, R. ; Donoval, D. ; Eternai, L.I. ; Novotny, I. ; Geurts, J. ; Phail, D. S Mc ; Chater, R. ; Nemcsics, A.
Author_Institution :
Dept. of Microelectron., Slovak Acad. of Sci., Bratislava, Slovakia
Abstract :
Bevels through Si/SiGe structures were prepared by chemical etching. The surface of the bevels was smooth and bevel angles were in the range 10-4 rad. From the Raman spectra along the bevels the thickness and composition of SiGe alloys were determined and compared with photocurrent response spectrum of the structures.
Keywords :
Ge-Si alloys; Raman spectra; elemental semiconductors; etching; photoemission; semiconductor junctions; semiconductor materials; silicon; Raman spectroscopy; Si-SiGe; Si/SiGe structures; chemical beveling; chemical etching; composition; photocurrent response spectrum; Chemical analysis; Chemical technology; Germanium silicon alloys; Petroleum; Photoconductivity; Protection; Raman scattering; Silicon germanium; Spectroscopy; Sputter etching;
Conference_Titel :
Advanced Semiconductor Devices and Microsystems, 2002. The Fourth International Conference on
Print_ISBN :
0-7803-7276-X
DOI :
10.1109/ASDAM.2002.1088505
