DocumentCode
2549816
Title
Evaluation of δ-layer depth profiles detected on beveled semiconductor structures by micro Raman spectroscopy
Author
Rheinländer, B. ; Srnanek, R. ; Kovac, J.
Author_Institution
Dept. of Semicond., Leipzig Univ., Germany
fYear
2002
fDate
14-16 Oct. 2002
Firstpage
199
Lastpage
202
Abstract
The theoretical evaluation of the Raman intensities ratio of LO and TO phonons along the beveled GaAs structure containing Si δ-doped layer was performed. Excellent agreement with measured spectra was obtained.
Keywords
III-V semiconductors; Raman spectra; doping profiles; gallium arsenide; phonons; spectral line intensity; GaAs; LO phonons; Raman intensities ratio; TO phonons; beveled semiconductor structures; delta layer depth profiles; micro Raman spectroscopy; Absorption; Atom optics; Atomic beams; Atomic layer deposition; Gallium arsenide; Laser excitation; Laser modes; Microscopy; Raman scattering; Spectroscopy;
fLanguage
English
Publisher
ieee
Conference_Titel
Advanced Semiconductor Devices and Microsystems, 2002. The Fourth International Conference on
Print_ISBN
0-7803-7276-X
Type
conf
DOI
10.1109/ASDAM.2002.1088506
Filename
1088506
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