• DocumentCode
    2549833
  • Title

    Auger investigations of GaAs sputtered with low-energy Ar+ ions at glancing incidence

  • Author

    Kosiba, R. ; Ecke, G. ; Breza, J. ; Liday, J.

  • Author_Institution
    Dept. of Nanotechnology, Ilmenau Tech. Univ., Germany
  • fYear
    2002
  • fDate
    14-16 Oct. 2002
  • Firstpage
    203
  • Lastpage
    206
  • Abstract
    Sputter induced effects due to the bombardment of GaAs with low energy Ar+ ions were investigated by means of AES. The ion energy varied between 0.3 and 5 keV, and the incidence angle was 80° with respect to the surface normal. Increasing As depletion in the surface region was observed with increasing argon ion energy. A shift of Auger peaks by 1 eV was defected for both As and Ga LMM Auger transitions with the increase of the argon energy. This shift is related to the lattice damage extension in the surface region due to argon bombardment.
  • Keywords
    Auger electron spectra; III-V semiconductors; gallium arsenide; ion-surface impact; sputtering; surface composition; 0.3 to 5 keV; AES; Ar; GaAs; glancing incidence; ion energy effects; lattice damage extension; low-energy Ar+ ion sputtering; sputter induced effects; surface depletion; Argon; Current density; Electrons; Gallium arsenide; Large Hadron Collider; Microelectronics; Multi-layer neural network; Spectroscopy; Sputtering; Surface morphology;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Advanced Semiconductor Devices and Microsystems, 2002. The Fourth International Conference on
  • Print_ISBN
    0-7803-7276-X
  • Type

    conf

  • DOI
    10.1109/ASDAM.2002.1088507
  • Filename
    1088507
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2549833