An analytical heterojunction diode model including the electron transport inside the depletion layer and the breakdown

Author

Horák, M.

Author_Institution

Dept. of Microelectron., Brno Univ. of Technol., Czech Republic

fYear

2002

fDate

14-16 Oct. 2002

Firstpage

215

Lastpage

218

Abstract

An analytical model that describes the Np⁺-heterojunction diode forward and reverse current is presented. The following physical processes at the heterojunction are considered: drift and diffusion with field dependent mobility, recombination, band-to-band tunneling, avalanche multiplication, thermionic-field emission. The resulting formula describes the diode current in the whole extent from forward bias through reverse bias up to breakdown.

Keywords

avalanche breakdown; carrier mobility; electron-hole recombination; semiconductor device breakdown; semiconductor device models; semiconductor diodes; thermionic electron emission; tunnelling; Np⁺-heterojunction diode; avalanche multiplication; band-to-band tunneling; breakdown; carrier diffusion; carrier drift; depletion layer; electron transport; field dependent mobility; forward current; heterojunction diode model; recombination; reverse current; thermionic-field emission; Analytical models; Charge carrier processes; Current density; Diodes; Electric breakdown; Electron emission; Equations; Heterojunctions; Radiative recombination; Thermionic emission;

fLanguage

English

Publisher

ieee

Conference_Titel

Advanced Semiconductor Devices and Microsystems, 2002. The Fourth International Conference on

Print_ISBN

0-7803-7276-X

Type

conf

DOI

10.1109/ASDAM.2002.1088510

Filename

1088510