Title :
CMOS receivers in the 100–140 GHz range
Author :
Voinigescu, S.P. ; Khanpour, M. ; Nicolson, S.T. ; Tomkins, A. ; Laskin, E. ; Cathelin, A. ; Belot, D.
Author_Institution :
Edward S. Rogers, Sr. Dept. of Electr. & Comput. Eng., Univ. of Toronto, Toronto, ON, Canada
Abstract :
This paper reviews recent research conducted at the University of Toronto on the development of imaging and radio transceivers in CMOS, aimed at operation in the 100-GHz to 200-GHz range. Two receivers fabricated in 65-nm GPLP CMOS technology are described. The first is a 90-100 GHz IQ receiver with 7-dB noise figure, 10.5-dB downconversion gain and fundamental frequency VCO. The second receiver has a double-sideband architecture and operates in the 135-145 GHz range and features an 8-dB gain LNA, a double-balanced Gilbert cell mixer and a dipole antenna.
Keywords :
CMOS analogue integrated circuits; dipole antennas; low noise amplifiers; millimetre wave antennas; millimetre wave mixers; millimetre wave receivers; transceivers; voltage-controlled oscillators; CMOS receivers; GPLP CMOS technology; IQ receiver; LNA; VCO; dipole antenna; double-balanced Gilbert cell mixer; frequency 100 GHz to 200 GHz; frequency 90 GHz to 100 GHz; gain 10.5 dB; gain 8 dB; noise figure 7 dB; radio transceivers; size 65 nm; Application software; Biosensors; CMOS image sensors; CMOS technology; Communication system security; Millimeter wave integrated circuits; Noise figure; Receivers; Switches; Transceivers; CMOS millimeter-wave integrated circuits; MOS devices; low-noise receivers; millimeter-wave antenna; millimeter-wave imaging;
Conference_Titel :
Microwave Symposium Digest, 2009. MTT '09. IEEE MTT-S International
Conference_Location :
Boston, MA
Print_ISBN :
978-1-4244-2803-8
Electronic_ISBN :
0149-645X
DOI :
10.1109/MWSYM.2009.5165665
