Title :
MSM diodes based on an AlGaN/GaN HEMT layer structure for varactor and photodiode application
Author :
Marso, M. ; Bernat, Jakub ; Wolter, M. ; Javorka, P. ; Fox, A. ; Kordos, P.
Author_Institution :
Inst. of Thin Films & Interfaces, Res. Centre Julich, Germany
Abstract :
The electrical and optoelectronic properties of MSM diodes that are based on an AlGaN/GaN HEMT layer system are investigated. Device fabrication uses standard HEMT processing steps, allowing integration in HEMT circuits without the need of sophisticated growth or etching techniques. The CMAX/CMIN ratio can be tuned by electrode geometry in contrast to conventional varactor diode concepts. Capacitance ratios up to 100 have been reached that exceed best values for published heterostructure varactor diodes. RF optimized devices with 0.5 μm electrode length exhibit cut-off frequencies up to 86 GHz. Optoelectronic measurements show the potential of the device as MSM photodetector.
Keywords :
III-V semiconductors; aluminium compounds; capacitance; gallium compounds; high electron mobility transistors; metal-semiconductor-metal structures; microwave diodes; photodetectors; photodiodes; varactors; wide band gap semiconductors; 0.5 micron; 20 GHz; 86 GHz; AlGaN-GaN; AlGaN/GaN HEMT layer structure; IYEMT circuits; MSM diodes; MSM photodetector; RF optimized devices; capacitance ratios; cutoff frequencies; device fabrication; electrical properties; electrode geometry; optoelectronic properties; photodiode application; standard HEMT processing steps; varactor application; Aluminum gallium nitride; Circuits; Diodes; Electrodes; Etching; Gallium nitride; HEMTs; Optical device fabrication; Photodiodes; Varactors;
Conference_Titel :
Advanced Semiconductor Devices and Microsystems, 2002. The Fourth International Conference on
Print_ISBN :
0-7803-7276-X
DOI :
10.1109/ASDAM.2002.1088528
