EKV compact model extension for HV lateral DMOS transistors

Author

Hefyene, N. ; Sallese, I.M. ; Anghel, C. ; Ionescu, A.M. ; Frere, S.F. ; Gillon, R.

Author_Institution

Ecole Polytech. Fed. de Lausanne, Switzerland

fYear

2002

fDate

14-16 Oct. 2002

Firstpage

345

Lastpage

348

Abstract

This paper reports for the first time on the extension of the EKV compact model for high-voltage (HV) MOSFETs. A continuous expression is derived for the drift bias-dependent resistance of DMOS transistors and then validated in different operation regions (in linear and saturation regimes). When combined with EKV, the proposed new drift model provides very accurate DC modeling including quasi-saturation.

Keywords

electrical resistivity; power MOSFET; semiconductor device models; DC modeling; DMOS transistors; EKV compact model extension; HV lateral DMOS transistors; continuous expression; drift bias-dependent resistance; drift model; high-voltage MOSFETs; linear regime; quasi-saturation; saturation regime; Automotive engineering; CMOS process; CMOS technology; Integrated circuit modeling; MOSFET circuits; Physics; Radio frequency; Semiconductor device modeling; Testing; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Advanced Semiconductor Devices and Microsystems, 2002. The Fourth International Conference on

Print_ISBN

0-7803-7276-X

Type

conf

DOI

10.1109/ASDAM.2002.1088540

Filename

1088540

Link To Document

https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2550421