Title :
EKV compact model extension for HV lateral DMOS transistors
Author :
Hefyene, N. ; Sallese, I.M. ; Anghel, C. ; Ionescu, A.M. ; Frere, S.F. ; Gillon, R.
Author_Institution :
Ecole Polytech. Fed. de Lausanne, Switzerland
Abstract :
This paper reports for the first time on the extension of the EKV compact model for high-voltage (HV) MOSFETs. A continuous expression is derived for the drift bias-dependent resistance of DMOS transistors and then validated in different operation regions (in linear and saturation regimes). When combined with EKV, the proposed new drift model provides very accurate DC modeling including quasi-saturation.
Keywords :
electrical resistivity; power MOSFET; semiconductor device models; DC modeling; DMOS transistors; EKV compact model extension; HV lateral DMOS transistors; continuous expression; drift bias-dependent resistance; drift model; high-voltage MOSFETs; linear regime; quasi-saturation; saturation regime; Automotive engineering; CMOS process; CMOS technology; Integrated circuit modeling; MOSFET circuits; Physics; Radio frequency; Semiconductor device modeling; Testing; Voltage;
Conference_Titel :
Advanced Semiconductor Devices and Microsystems, 2002. The Fourth International Conference on
Print_ISBN :
0-7803-7276-X
DOI :
10.1109/ASDAM.2002.1088540
