Growth of defect-free butt-coupled InGaAsP/InGaAsP strain compensated multiple quantum well by metal-organic vapor phase epitaxy

Author

Lee, Seung Won ; Kim, Jeong Soo ; Nam, Eun Soo ; Park, Chan Yong ; Park, Chong Dae ; Kim, Hong Man ; Pyun, Kwang Eui

Author_Institution

Optoelectron. Sect., Electron. & Telecommun. Res. Inst., Yusong, South Korea

Volume

2

fYear

1996

fDate

18-21 Nov. 1996

Firstpage

189

Abstract

The electro-absorption modulator integrated distributed feedback (DFB) laser is an attractive device for a high bit rate and long haul optical communication system due to its narrow modulated spectral linewidth compared to a direct drive laser diode. In this report we present the successful growth of InGaAsP/InGaAsP strain compensated MQW butt-coupled to MQW laser by using a thick InP buffer layer growth.

Keywords

III-V semiconductors; distributed feedback lasers; electro-optical modulation; electroabsorption; gallium arsenide; indium compounds; integrated optics; optical couplers; quantum well lasers; semiconductor growth; vapour phase epitaxial growth; InGaAsP-InGaAsP; InP; MQW laser; defect-free butt-coupled InGaAsP/InGaAsP strain compensated MQW; electro-absorption modulator integrated distributed feedback laser; high bit rate; long haul optical communication system; metal-organic vapor phase epitaxy; multiple quantum well; narrow modulated spectral linewidth; thick InP buffer layer growth; Bit rate; Buffer layers; Capacitive sensors; Diode lasers; Distributed feedback devices; Drives; Indium phosphide; Laser feedback; Optical fiber communication; Quantum well devices;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society Annual Meeting, 1996. LEOS 96., IEEE

Conference_Location

Boston, MA, USA

Print_ISBN

0-7803-3160-5

Type

conf

DOI

10.1109/LEOS.1996.571616

Filename

571616