Title :
Titanium- and molybdenum-related levels in EFG silicon
Author :
Borenstein, J.T. ; Bathey, B.R. ; Kalejs, J.P. ; Hanoka, J.I. ; Pearce, N.O.
Author_Institution :
Mobil Solar Energy Corp., Billerica, MA, USA
Abstract :
The behavior of titanium and molybdenum in edge-defined film-fed grown (EFG) silicon has been investigated using deep-level transient spectroscopy (DLTS). These impurities were intentionally introduced at high concentrations into the silicon melt during EFG growth. Infrared photoconductivity (IRPC) measurements made on the processed material revealed sharply reduced base diffusion lengths. Subsequent DLTS measurements revealed trap levels in the EFG material similar to those previously reported for these elements in single-crystal silicon. In spite of the proximity of the Ti and Mo hole-trapping levels to each other, their activation energies could be distinguished
Keywords :
crystal growth from melt; deep level transient spectroscopy; deep levels; elemental semiconductors; impurities; molybdenum; photoconductivity; semiconductor growth; silicon; titanium; EFG silicon; IR photoconductivity measurements; Si:Mo; Si:Ti; activation energies; deep-level transient spectroscopy; edge-defined film-fed growth; hole-trapping levels; impurities; Crystallization; Energy measurement; Energy states; Impurities; Length measurement; Photoconducting materials; Photovoltaic cells; Silicon; Spectroscopy; Titanium;
Conference_Titel :
Photovoltaic Specialists Conference, 1991., Conference Record of the Twenty Second IEEE
Conference_Location :
Las Vegas, NV
Print_ISBN :
0-87942-636-5
DOI :
10.1109/PVSC.1991.169361
