Title :
Enhancing lifetime of NVM-based main memory with bit shifting and flipping
Author :
Xianlu Luo ; Duo Liu ; Kan Zhong ; Dan Zhang ; Yi Lin ; Jie Dai ; Weichen Liu
Author_Institution :
Coll. of Comput. Sci., Chongqing Univ., Chongqing, China
Abstract :
Non-volatile memory (NVM) is considered as the most promising candidate of main memory due to many attractive properties, such as shock-resistivity, non-volatility, high density and near zero leakage power. However, the write endurance and high write energy consumption greatly limit its adoption in modern memory systems. In this paper, we propose a write reduction technique, called Min-Shift, to reduce the total number of writes to NVM. The basic idea is to re-encode the data to be written via bit shifting and flipping. This is motivated by the fact that NVM write operation takes more latency than read, and the energy cost of the value to be written varies a lot. The effectiveness of Min-Shift is verified by mathematical analysis and experiment. Experimental results show that the proposed technique can reduce the number of writes by 57.3% on average. The lifetime of NVM is 2.3× longer than before.
Keywords :
mathematical analysis; random-access storage; Min-Shift; NVM-based main memory; bit shifting; flipping; high write energy consumption; mathematical analysis; memory systems; near zero leakage power; nonvolatile memory; shock-resistivity; write endurance; write reduction technique; Energy consumption; Hamming distance; Measurement; Nonvolatile memory; Phase change materials; Random access memory; Non-volatile memory; bit shifting; lifetime;
Conference_Titel :
Embedded and Real-Time Computing Systems and Applications (RTCSA), 2014 IEEE 20th International Conference on
Conference_Location :
Chongqing
DOI :
10.1109/RTCSA.2014.6910554