• DocumentCode
    2550943
  • Title

    The application of silicon dioxide as an electret material

  • Author

    Sprenkels, A.J. ; Olthuis, W. ; Berveld, P.

  • Author_Institution
    Twente Univ., Enschede, Netherlands
  • fYear
    1988
  • fDate
    1-3 Sep 1988
  • Firstpage
    165
  • Lastpage
    169
  • Abstract
    The authors have investigated silicon dioxide for its electret properties. It appears that thermally grown silicon dioxide has a large lateral surface conductivity, resulting in poor electret behavior. This can be adequately reduced by chemical surface modification, resulting in an excellent silicon dioxide electret. Experiments have shown that corona-charged SiO2 layers are much more resistant to high temperatures than Teflon-FEP electrets. A 1.1-μm-thick SiO2 layer, charged up to 150 V, yields a time constant of the charge decay in excess of 400 yr at ambient laboratory conditions
  • Keywords
    electrets; silicon compounds; surface conductivity; SiO2 layers; Teflon-FEP electrets; corona charged layers; electret material; lateral surface conductivity; surface modification; Chemical technology; Conducting materials; Electrets; Integrated circuit technology; Laboratories; Microphones; Polymers; Silicon compounds; Temperature; Thermal conductivity;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electrets, 1988. (ISE 6) Proceedings., 6th International Symposium on (IEEE Cat. No.88CH2593-2)
  • Conference_Location
    Oxford
  • Type

    conf

  • DOI
    10.1109/ISE.1988.38543
  • Filename
    38543