Characteristics of low threshold 1.3 /spl mu/m lasers grown by solid source molecular beam epitaxy

Author

Wamsley, C.C. ; Koch, M.W. ; Wicks, G.W.

Author_Institution

Inst. of Opt., Rochester Univ., NY, USA

Volume

2

fYear

1996

fDate

18-21 Nov. 1996

Firstpage

193

Abstract

We report on the growth and characterization of high quality 1.3 /spl mu/m lasers grown by SSMBE with various laser structures and core materials. Our best 1.3 /spl mu/m lasers utilize compressively strained InAsP/GaInAsP quantum wells. Compressive strain serves to decrease the heavy hole effective mass which reduces the density of states of the valence band resulting in lower threshold currents as compared to lattice matched devices. The room temperature photoluminescence and threshold current density versus inverse cavity length are shown.

Keywords

III-V semiconductors; current density; effective mass; electronic density of states; gallium arsenide; indium compounds; laser transitions; molecular beam epitaxial growth; photoluminescence; quantum well lasers; semiconductor growth; valence bands; 1.3 mum; InAsP-GaInAsP; SSMBE; compressively strained InAsP/GaInAsP quantum wells; core materials; density of states; heavy hole effective mass; high quality 1.3 /spl mu/m lasers; inverse cavity length; laser structures; low threshold 1.3 /spl mu/m lasers; room temperature photoluminescence; solid source molecular beam epitaxy; threshold current density; threshold currents; valence band; Electrons; Indium phosphide; Molecular beam epitaxial growth; Optical devices; Optical materials; Quantum well devices; Quantum well lasers; Solid lasers; Temperature; Threshold current;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society Annual Meeting, 1996. LEOS 96., IEEE

Conference_Location

Boston, MA, USA

Print_ISBN

0-7803-3160-5

Type

conf

DOI

10.1109/LEOS.1996.571618

Filename

571618