• DocumentCode
    2551211
  • Title

    Silicon strip sensor simulations for the CMS phase-II tracker upgrade

  • Author

    Eichhorn, Thomas

  • Author_Institution
    Deutsches Elektronen-Synchrotron DESY, Hamburg, Germany
  • fYear
    2012
  • fDate
    Oct. 27 2012-Nov. 3 2012
  • Firstpage
    1664
  • Lastpage
    1669
  • Abstract
    The future high luminosity upgrade of the LHC will necessitate radiation harder sensors for the CMS silicon strip tracker. CMS has instigated a campaign to identify a possible technology baseline for upcoming sensor generations. In addition to measurements, simulations can give an important insight into specific sensor properties. In this report, the concept of TCAD simulations is briefly explained, followed by sensor simulation results before and after irradiation. These results are then compared to measurements. The focus lies on the inter-strip capacitance Cint of silicon strip sensors.
  • Keywords
    particle tracks; position sensitive particle detectors; silicon radiation detectors; technology CAD (electronics); CMS phase-II tracker upgrade; LHC high luminosity upgrade; TCAD simulations; inter-strip capacitance; radiation harder sensors; silicon strip sensor simulations; CMS upgrade; Radiation damage; Silicon radiation detectors; TCAD simulations;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nuclear Science Symposium and Medical Imaging Conference (NSS/MIC), 2012 IEEE
  • Conference_Location
    Anaheim, CA
  • ISSN
    1082-3654
  • Print_ISBN
    978-1-4673-2028-3
  • Type

    conf

  • DOI
    10.1109/NSSMIC.2012.6551395
  • Filename
    6551395
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2551211