Straightforward determination of small-signal model parameters for bulk RF-MOSFETs

An analytical methodology to extract MOSFET´s extrinsic and intrinsic small-signal parameters is presented in this paper to perform accurate simulations at high-frequencies. In contrast to previously reported approaches, the one proposed here allows the direct and simple extraction of the gate, substrate, and bias dependent source and drain resistances from measured S-parameters. Excellent agreement between simulated and experimental data up to 27 GHz for a 0.18 μm channel-length MOSFET validates this fast and accurate methodology.