Title :
Modeling the undoped-body symmetric dual-gate MOSFET
Author :
Malobabic, Slavica ; Ortiz-Conde, Adelmo ; Sánchez, Francisco J García
Author_Institution :
Solid State Electron. Lab., Univ. Simon Bolivar, Caracas, Venezuela
Abstract :
A model of the undoped-body symmetric dual-gate MOSFET is presented based on the explicit analytic solution of its surface potential using the Lambert W function. The total channel carrier charge and drain current may be readily obtained from this solution. Results from the proposed solution are compared to exact results numerically calculated by iteration.
Keywords :
MOSFET; semiconductor device models; Lambert W function; MOS compact modeling; channel carrier charge; drain current; intrinsic channel; semiconductor device modeling; undoped-body symmetric dual-gate MOSFET; CMOS technology; Circuit simulation; Computational efficiency; Equations; Laboratories; MOSFET circuits; Nanoscale devices; Physics; Silicon on insulator technology; Solid state circuits;
Conference_Titel :
Devices, Circuits and Systems, 2004. Proceedings of the Fifth IEEE International Caracas Conference on
Print_ISBN :
0-7803-8777-5
DOI :
10.1109/ICCDCS.2004.1393346
