Title :
Physics based analytical solution to undoped cylindrical surrounding-gate (SRG) MOSFETs
Author :
He, Jin ; Chan, Mansun
Author_Institution :
Dept. of EECS, Univ. of California at Berkeley, CA, USA
Abstract :
A physics based analytical solution to undoped cylindrical surrounding-gate (SRG) MOSFETs is derived in this paper by solving the Poisson-Boltzmann equation. The solution produces a closed form solution for the energy band bending. Based on the solution, the exact inversion charge density can be directly expressed as a function of the quasi-Fermi potential, gate voltage and device structure geometries. The accurate physics included in the analytical solution can be used to predict the performance of surrounding-gate MOSFETs under unconventional operation condition such as volume inversion effect due to silicon body diameter and structure dependent effective oxide thickness effects that are unique in a SRG MOSFET.
Keywords :
Boltzmann equation; MOSFET; Poisson equation; semiconductor device models; Poisson-Boltzmann equation; compact modeling; device physics; device structure geometries; energy band bending; exact inversion charge density; gate voltage; oxide thickness effects; quasi-Fermi potential; undoped cylindrical surrounding-gate MOSFET; volume inversion effect; Boundary conditions; CMOS technology; Closed-form solution; Geometry; Helium; MOSFETs; Physics; Poisson equations; Silicon; Voltage;
Conference_Titel :
Devices, Circuits and Systems, 2004. Proceedings of the Fifth IEEE International Caracas Conference on
Print_ISBN :
0-7803-8777-5
DOI :
10.1109/ICCDCS.2004.1393347
