Title :
V-band power amplifier MMICs exhibiting low power slump characteristics utilizing a production released 0.15-um GaAs PHEMT process
Author :
Campbell, Charles F. ; Moochalla, Shabbir ; Daugherty, David ; Taft, William J. ; Kao, Ming-Yih ; Fanning, David
Author_Institution :
TriQuint Semicond., Richardson, TX, USA
Abstract :
The design and performance of 0.15-um PHEMT V-band driver and power amplifier MMICs suitable for satellite communication systems is presented. The amplifiers utilize a proven commercially available production released process featuring demonstrated low power slump characteristics and reliability suitable for space applications. Experimental results for the driver amplifier MMIC demonstrate greater than 17 dB of small signal gain, 25 dBm saturated output power and 29% power added efficiency at 60 GHz. The power amplifier MMIC provides 17 dB of small signal gain, up to 27.5 dBm saturated output power and 26% power added efficiency. A 1200-hour test at 5 dB gain compression resulted in less than 0.5 dB of output power drift.
Keywords :
MMIC amplifiers; gallium arsenide; high electron mobility transistors; power amplifiers; satellite communication; GaAs; GaAs PHEMT process; MMIC; V-band power amplifier; frequency 60 GHz; gain 17 dB; low power slump characteristics; satellite communication systems; size 0.15 mum; Driver circuits; Gallium arsenide; MMICs; PHEMTs; Power amplifiers; Power generation; Power system reliability; Process design; Production; Satellite communication; MMICs; Power Amplifiers; Power Slump; V-band;
Conference_Titel :
Microwave Symposium Digest, 2009. MTT '09. IEEE MTT-S International
Conference_Location :
Boston, MA
Print_ISBN :
978-1-4244-2803-8
Electronic_ISBN :
0149-645X
DOI :
10.1109/MWSYM.2009.5165726
