V-band power amplifier MMICs exhibiting low power slump characteristics utilizing a production released 0.15-um GaAs PHEMT process

Author

Campbell, Charles F. ; Moochalla, Shabbir ; Daugherty, David ; Taft, William J. ; Kao, Ming-Yih ; Fanning, David

Author_Institution

TriQuint Semicond., Richardson, TX, USA

fYear

2009

fDate

7-12 June 2009

Firstpage

433

Lastpage

436

Abstract

The design and performance of 0.15-um PHEMT V-band driver and power amplifier MMICs suitable for satellite communication systems is presented. The amplifiers utilize a proven commercially available production released process featuring demonstrated low power slump characteristics and reliability suitable for space applications. Experimental results for the driver amplifier MMIC demonstrate greater than 17 dB of small signal gain, 25 dBm saturated output power and 29% power added efficiency at 60 GHz. The power amplifier MMIC provides 17 dB of small signal gain, up to 27.5 dBm saturated output power and 26% power added efficiency. A 1200-hour test at 5 dB gain compression resulted in less than 0.5 dB of output power drift.

Keywords

MMIC amplifiers; gallium arsenide; high electron mobility transistors; power amplifiers; satellite communication; GaAs; GaAs PHEMT process; MMIC; V-band power amplifier; frequency 60 GHz; gain 17 dB; low power slump characteristics; satellite communication systems; size 0.15 mum; Driver circuits; Gallium arsenide; MMICs; PHEMTs; Power amplifiers; Power generation; Power system reliability; Process design; Production; Satellite communication; MMICs; Power Amplifiers; Power Slump; V-band;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 2009. MTT '09. IEEE MTT-S International

Conference_Location

Boston, MA

ISSN

0149-645X

Print_ISBN

978-1-4244-2803-8

Electronic_ISBN

0149-645X

Type

conf

DOI

10.1109/MWSYM.2009.5165726

Filename

5165726